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NILMS4501N
MAIN MOSFET ELECTRICAL CHARACTERISTICS (continued) (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C iss
?
1380
1500
pF
Output Capacitance
Transfer Capacitance
(V DS = 6.0 V, V GS = 0 V, f = 1.0 MHz)
C oss
C rss
?
?
870
275
1000
350
SWITCHING CHARACTERISTICS (Note 6)
Turn?On Delay Time
t d(on)
?
12
14
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 6.0 V, I D = 2.0 A,
V GS = 4.5 V, R G = 2.5 W )
t r
t d(off)
t f
?
?
?
15
17
6.0
18
20
8.0
Turn?On Delay Time
t d(on)
?
8.5
11
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 6.0 V, I D = 2.0 A,
V GS = 10 V, R G = 2.5 W )
t r
t d(off)
t f
?
?
?
15
22.5
6.5
20
27
9.0
Gate Charge
Gate Charge
(V DS = 6.0 V, I D = 2.0 A, V GS = 4.5 V)
(V DS = 6.0 V, I D = 2.0 A, V GS = 10 V)
Q T
Q G(th)
Q gs
Q gd
Q T
Q G(th)
Q gs
Q gd
?
?
?
?
?
?
?
?
11
1.7
3.5
3.6
23.5
4.4
5.6
2.5
14
2.5
4.5
4.3
25
5.5
10
7.0
nC
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
(Notes 5 & 6)
Reverse Recovery Time
(I S = 6.0 A, V GS = 0 V)
(I S = 6.0 A, V GS = 0 V, T J = 175 ° C)
V SD
t rr
?
?
?
0.80
0.57
42
1.1
?
55
V
ns
(Note 6)
(I S = 3.0 A, V GS = 0 V, dI S /dt = 100 A/ m s)
t a
t b
?
?
19.5
22.5
25
30
Reverse Recovery Stored
Q RR
?
0.042
0.06
m C
Charge (Note 6)
5. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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